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| 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: (480) 941-6300 Fax: (480) 947-1503 TSMBJ1005C thru TSMBJ1024CB Bi-directional 100 AMP Thyristor Surge Protective Devices (TSPD) MECHANICAL CHARACTERISTICS CASE STYLE: SMBJ (DO-214AA) CASE STYLE: SMBG (DO215AA) SMBJ SMBG FEATURES * * * * * * * * Bidirectional Transient Voltage Protection Surge capabilities up to 100 Amps @ 10/1000 s or 300 Amps @8/20 s (note 2,5) Initial Breakdown Voltage from 60 to 300 volts Positive Resistance Breakover Voltages from 100 to 400 volts Clamping speeds of Nanoseconds and Oxide-Glass Passivated Junctions High Off-State Impedance (low leakage) and low on-state voltage (crowbar action) Encapsulating material meets UL 94VO requirements UL RECOGNIZED: Qualified to UL 497B File No. E152273 * * * * * * * Bellcore 1089 compliant add "B" suffix (TSMBJ1005CB - TSMBJ1024CB) 0 0 MAXIMUM RATINGS Operating Temperatures: -40 C to +150 C 0 0 Storage Temperature: -65 C to +150 C Repetitive Off-State Voltage (both directions): See Electrical Characteristics for VDRM Non-Repetitive Peak Impulse Current (IPP): 100 A @ 10/1000 s or 300 A @ 8/20 s Option: Bellcore 1089 compliant (IPP = 312.5 A @ 8/20 s) Non-Repetitive Peak On-State Current (ITSM): @ 8.3 ms (one-half cycle); 60 Amps MECHANICAL * * * Lead solder temperature (10 sec duration) 260C Weight: 1.5 grams(approximate) Marked with logo and marking code PACKAGING * * Tape & Reel EIA Standard 481-1-A 13 inch reel 2,500, pieces INCHES MIN/MAX A B C Breakover Voltage On-State Voltage @IT = 1 A (pulsed) VT VOLTS MAX 3.5 3.5 3.5 3.5 3.5 3.5 IH mA MIN 150 150 150 150 150 150 IH mA MAX 750 750 750 750 750 750 Co @ 0v pF MAX 200 200 200 200 200 200 Co @ 50v pF MAX 100 100 100 100 100 100 D Holding Current Capacitance (1 MHz) E F G H .077/.083 .160/.180 .130/1.55 .205/.220 .075/.095 .235/.255 .015/.030 .030/.060 MILLIMETERS MIN/MAX 1.96/2.10 4.06/4.57 3.30/3.94 5.21/5.59 1.91/2.41 5.97/6.48 0.38/0.76 0.76/1.52 Electrical Characteristics @ 25C Rated Peak Pulse Current 100 Amps @ 10/1000 s Part Number Rated Repetitive Product Off-State Marking Voltage (see note 3) Marking VDRM VOLTS MAX 50 60 160 180 220 240 Off-State Leakage Current @ VDRM IDRM A MAX 5 5 5 5 5 5 Breakdown Voltage @I(BR)=1 mA (see note 3) (see note 1) V(BR) VOLTS MIN 60 70 190 220 275 300 V(BO) VOLTS MAX 100 110 265 300 350 400 LEAD FINISH: Solder Dip or Lead Tin Plate POLARITY: Bi-directional TSMBJ1005C TSMBJ1006C TSMBJ1016C TSMBJ1018C TSMBJ1022C TSMBJ1024C T1005C T1006C T1016C T1018C T1022C T1024C NOTES: 1. 2. 3. 4. For rise times less than 1 kV/ms. For very fast times up to 1 kV/s, V(BO) will be 110% of V(BO) Max., The I(BO) is 750 mA. Critical rate of rise of On-State current is 100 A/s Max. Maximum rate of rise of Off-State voltage VDRM that will not trigger device is 5 kV/s (TJ = 70C). Breakdown voltage V(BR) has a positive temperature coefficient of + 0.1 %/C. MSC0107B.PDF ISO 9001 CERTIFIED REV F 7/31/01 |
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